1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
FOR 9.8 Gb/s CPRI and 10G E-PON ONU APPLICATION

DESCRIPTION
The NX6351GP series is a 1 270/1 290/1 310/1 330/1 350 nm Multiple
Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser
diode with InGaAs monitor PIN-PD.
APPLICATIONS
• 9.8 Gbps CPRI
• 10G E-PON ONU
FEATURES
• Optical output power PO = 8.5 mW
• Low threshold current Ith = 7 mA
• Differential efficiency ηd = 0.35 W/A
• Wide operating temperature range TC = −40 to +85°C
• InGaAs monitor PIN-PD
• CAN package φ 5.6 mm
• Focal point 10.2 mm