1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM
InGaAsP MQW-DFB LASER DIODE

DESCRIPTION
The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well (MQW)
structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD.
These devices are ideal for 2.5 Gb/s CWDM application.
FEATURES
• Optical output power Po = 5.0 mW
• Peak emission wavelength λp = 1 470 to 1 610 nm (Based on CWDM)
• Low threshold current lth = 10 mA
• High speed tr = 100 ps MAX.
tf = 150 ps MAX.
• Side mode suppression ratio SMSR = 40 dB
• Operating case temperature range TC = −20 to +85°C
• InGaAs monitor PIN-PD
• CAN package φ 5.6 mm
• Based on Telcordia reliability