| 制造商 | 部件名 | 数据表 | 功能描述 |
 VBsemi Electronics Co.,... |
SI4190DY-T1-GE3
|
1Mb / 9P |
N-Channel 100-V (D-S) Super Trench Power MOSFET
|
|
VBA1107S
|
740Kb / 9P |
N-Channel 100-V (D-S) Super Trench Power MOSFET
|
|
VBA1805S
|
756Kb / 9P |
N-Channel 80 V (D-S) Super Trench Power MOSFET
|
|
VBA1806S
|
747Kb / 9P |
N-Channel 80 V (D-S) Super Trench Power MOSFET
|
|
VBA1808S
|
755Kb / 9P |
N-Channel 80 V (D-S) Super Trench Power MOSFET
|
|
VBA1810S
|
737Kb / 9P |
N-Channel 80 V (D-S) Super Trench Power MOSFET
|
|
VBA3638S
|
760Kb / 9P |
Dual N-Channel 60 V (D-S) Super Trench Power MOSFET
|
|
VBM1105S
|
364Kb / 7P |
N-Channel 100-V (D-S) Super Trench Power MOSFET
|
|
VBM1106S
|
364Kb / 7P |
N-Channel 100-V (D-S) Super Trench Power MOSFET
|
|
VBM1107S
|
364Kb / 7P |
N-Channel 100-V (D-S) Super Trench Power MOSFET
|