| 制造商 | 部件名 | 数据表 | 功能描述 |
 Advanced Power Technolo... |
APT1001
|
35Kb / 2P |
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
|
|
APT1001
|
50Kb / 4P |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
 Inchange Semiconductor ... |
APT1001R1AN
|
309Kb / 2P |
isc N-Channel MOSFET Transistor
|
 Advanced Power Technolo... |
APT1001R1AVR
|
68Kb / 4P |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
|
|
APT1001R1BN
|
52Kb / 4P |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|