DESCRIPTION

N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers of TV

transposers and transmitters in band IV-V, as well as for driver stages in tube systems.

FEATURES:

• diffused emitter ballasting resistors for an optimum temperature profile;

• gold sandwich metallization ensures excellent reliability.



The transistor has a1⁄4" capstan envelope with ceramic cap. All leads are isolated from the stud.