VDSS = 30 V

ID = 6 A

RDS(ON) ≤ 100 mΩ (VGS = 10 V)

RDS(ON) ≤ 200 mΩ (VGS = 4.5 V)

GENERAL DESCRIPTION

N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology.

FEATURES

• ’Trench’ technology

• Low on-state resistance

• Fast switching

• High thermal cycling performance

• Low thermal resistance

Applications:-

• Motor and relay drivers

• d.c. to d.c. converters

• Logic level translator

The BSP100 is supplied in the SOT223 surface mounting package.