Description
Wolfspeed’s CGHV60040D is a gallium nitride (GaN) High
Electron Mobility Transistor (HEMT). GaN has superior
properties compared to silicon or gallium arsenide,
including higher breakdown voltage, higher saturated
electron drift velocity, and higher thermal conductivity.
GaN HEMTs offer greater power density and wider
bandwidths compared to Si and GaAs transistors.
Features
• 18 dB Typical Small Signal Gain at 4 GHz
• 17 dB Typical Small Signal Gain at 6 GHz
• 65% Typical Power Added Efficiency
• 40 W Typical PSAT
• 50 V Operation
• High Breakdown Voltage
• Up to 6 GHz Operation
• Bare die are shipped in Gel-Pak® containers
• Non-adhesive tacky membrane immobilizes die during shipment
Applications
• Cellular Infrastructure
• Class A, AB, Linear amplifiers suitable for OFDM,
W-CDMA, EDGE, CDMA waveforms