Description
The CMPA601C025F is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) based monolithic microwave integrated circuit
(MMIC) on a Silicon Carbide (SiC) substrate, using a 0.25μm gate
length fabrication process. The semiconductor offers 25 Watts of
power from 6 to 12 GHz of instantaneous bandwidth. The GaN HEMT
MMIC is housed in a thermally-enhanced, 10-lead 25 mm x 9.9 mm
metal/ceramic flanged package. It offers high gain and superior
efficiency in a small footprint package at 50 ohms.
Features
• 34 dB Small Signal Gain
• 40 W Typical PSAT
• Operation up to 28 V
• High Breakdown Voltage
• High Temperature Operation
• Size 0.172 x 0.239 x 0.004 inches
Applications
• Jamming Amplifiers
• Test Equipment Amplifiers
• Broadband Amplifiers