Description
The GTRA360502M houses two GaN-on-SiC power transistor for use in
asymmetric Doherty power amplifi ers. The device has been designed
for use in communications infrastructure applications from 3,400 MHz to
3,800 MHz. It operates from a supply voltage of up to 50 volts and delivers
a maximum, average output power of 8 watts.
Features
• GaN on SiC HEMT technology
• Asymmetrical Doherty design
- Main: P3dB = 20 W Typ
- Peak: P3dB = 36 W Typ
• Typical pulsed CW performance, 3600 MHz, 48 V, 10 μs
bandwidth, 10% duty cycle (Doherty configuration)
- Output power at P3dB = 50 W
- Drain efficiency = 62% @ 50 W
• Human Body Model Class 1A (per ANSI/ESDA/JEDEC
JS-001)
• Pb-free and RoHS compliant
• Low thermal resistance