Description
The GTVA107001EC and GTVA107001FC are 700-watt GaN on SiC high electron mobility transistors (HEMT) for use in the DC - 1.4 GHz frequecy band.
Features
• GaN on SiC HEMT technology
• Input matched
• Typical pulsed CW performance (class AB), 1030 MHz,
50 V, 128 µs pulse width, 10% duty cycle
- Output power P3dB = 890 W
- Drain efficiency = 75%
- Gain = 18 dB
• Capable of withstanding a 10:1 load mismatch (all
phase angles at 700 W peak power under pulse conditions: 50 V, 100 mA IDQ,128 µs pulse width, 10% duty
cycle
• Human Body Model Class IC (per ANSI/ESDA/JEDEC
JS-001)
• Pb-free and RoHS-compliant