Description
The GTVA126001EC and GTVA126001FC are 600-watt GaN on SiC high
electron mobility transistors (HEMT) for use in the DC - 1.4 GHz frequecy
band. They feature input matching, high efficiency, and thermallyenhanced packages.
Features
• GaN on SiC HEMT technology
• Input matched
• Typical pulsed CW performance (class AB), 1200 MHz,
50 V, 300 µs pulse width, 10% duty cycle
- Output power (P3dB) = 600 W
- Drain efficiency = 65%
- Gain = 18 dB
• Capable of withstanding a 10:1 load
mismatch (all phase angles) at 600 W peak power
under pulsed conditions: 300 µs pulse width, 10%
duty cycle, VDD = 50 V, IDQ = 100 mA
• Human Body Model Class 1C (per AnSI/ESDA/JEDEC
JS-001)
• Pb-free and RoHS compliant