Description
The GTVA261802FC is a 170-watt GaN on SiC high electron mobility
transistor (HEMT) for use in multi-standard cellular power amplifier
applications. It features input matching, high efficiency, and a
thermally-enhanced package with earless flange.
Features
• GaN on SiC HEMT technology
• Input matched
• Typical Pulsed CW performance, combined outputs,
2690 MHz, 48 V, 10 µs pulse width, 10% duty cycle
- Output power at P3dB = 170 W
- Drain Efficiency at P3dB = 65.5%
- Gain at P3dB = 15 dB
• Capable of handling 10:1 VSWR @ 48 V, 180 W (CW)
output power
• Human Body Model Class 1A (per ANSI/ESDA/JEDEC
JS-001)
• Low thermal resistance
• Pb-free and RoHS compliant