PTRA087008NB-V1-R2 数据表(PDF) - WOLFSPEED, INC.

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PTRA087008NB-V1-R2 数据表 (PDF) - WOLFSPEED, INC.

PTRA087008NB-V1-R2 Datasheet PDF - WOLFSPEED, INC.


部件名	PTRA087008NB-V1-R2

下载	PTRA087008NB-V1-R2 下载

文件大小	731.2 Kbytes

页	11 Pages

制造商	WOLFSPEED [WOLFSPEED, INC.]

网页	https://www.wolfspeed.com/

标志

功能描述	Thermally-Enhanced High Power RF LDMOS FET 650 W, 48 V, 755 – 805 MHz

PTRA087008NB-V1-R2 Datasheet (PDF)

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PTRA087008NB-V1-R2 Datasheet PDF - WOLFSPEED, INC.


部件名	PTRA087008NB-V1-R2

下载	PTRA087008NB-V1-R2 Click to download

文件大小	731.2 Kbytes

页	11 Pages

制造商	WOLFSPEED [WOLFSPEED, INC.]

网页	https://www.wolfspeed.com/

标志

功能描述	Thermally-Enhanced High Power RF LDMOS FET 650 W, 48 V, 755 – 805 MHz

PTRA087008NB-V1-R2 数据表 (HTML) - WOLFSPEED, INC.

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PTRA087008NB-V1-R2 产品详情

Description
The PTRA087008NB is a 650-watt LDMOS FET. It is designed for use in multistandard cellular power amplifier applications from 755 MHz to 805 MHz.
Manufactured with Wolfspeed’s advanced LDMOS process, this device provides
excellent thermal performance and superior reliability
Features
• Broadband internal input and output matching
• Asymmetric design
- Main: P1dB = 245 W Typ
- Peak: P1dB = 380 W Typ
• Typical pulsed CW performance, 805 MHz, 48 V,
Doherty configuration
- Output power at P3dB = 650 W
- Efficiency = 52%
- Gain = 19.5 dB
• Capable of handling 10:1 VSWR @48 V, 30 W
(WCDMA) output power
• Human Body Model Class 2 (per ANSI/ESDA/JEDEC
JS-001)
• Integrated ESD protection
• Low thermal resistance
• RoHS-compliant

类似零件编号 - PTRA087008NB-V1-R2

制造商	部件名	数据表	功能描述
Cree, Inc	PTRA087008NB	660Kb / 11P	Thermally-Enhanced High Power RF LDMOS FET 650 W, 48 V, 755 ??805 MHz

类似说明 - PTRA087008NB-V1-R2

制造商	部件名	数据表	功能描述
Infineon Technologies A...	PTVA084007NF	491Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 370 W, 48 V, 755 ??805 MHz Rev. 03, 2017-08-30
	PTRA083818NF	481Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 275 W, 48 V, 733 ??805 MHz Rev. 05.1, 2017-03-30
	PTRA093818NF	470Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 415 W, 48 V, 925 ??960 MHz Rev. 05.1, 2017-08-16
Cree, Inc	PTVA082407NF	639Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 746 ??821 MHz
	PTVA084007NF	486Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 370 W, 48 V, 755 ??805 MHz
	PTRA083818NF	606Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 275 W, 48 V, 733 ??805 MHz
	PTRA084808NF	649Kb / 12P	Thermally-Enhanced High Power RF LDMOS FET 550 W, 48 V, 734 ??821 MHz
	PTRA087008NB	660Kb / 11P	Thermally-Enhanced High Power RF LDMOS FET 650 W, 48 V, 755 ??805 MHz
WOLFSPEED, INC.	PTRA083818NF	708Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 275 W, 48 V, 733 – 805 MHz Rev. 06.2, 2022-1-27
WOLFSPEED, INC.	PTVA084007NF	497Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 370 W, 48 V, 755 – 805 MHz Rev. 04.2, 2022-02-13

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