PTVA104501EH-V1-R250 数据表(PDF) - WOLFSPEED, INC.

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PTVA104501EH-V1-R250 数据表 (PDF) - WOLFSPEED, INC.

PTVA104501EH-V1-R250 Datasheet PDF - WOLFSPEED, INC.


部件名	PTVA104501EH-V1-R250

下载	PTVA104501EH-V1-R250 下载

文件大小	540.34 Kbytes

页	10 Pages

制造商	WOLFSPEED [WOLFSPEED, INC.]

网页	https://www.wolfspeed.com/

标志

功能描述	Thermally-Enhanced High Power RF LDMOS FET 450 W, 50 V, 960 – 1215 MHz

PTVA104501EH-V1-R250 Datasheet (PDF)

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PTVA104501EH-V1-R250 Datasheet PDF - WOLFSPEED, INC.


部件名	PTVA104501EH-V1-R250

下载	PTVA104501EH-V1-R250 Click to download

文件大小	540.34 Kbytes

页	10 Pages

制造商	WOLFSPEED [WOLFSPEED, INC.]

网页	https://www.wolfspeed.com/

标志

功能描述	Thermally-Enhanced High Power RF LDMOS FET 450 W, 50 V, 960 – 1215 MHz

PTVA104501EH-V1-R250 数据表 (HTML) - WOLFSPEED, INC.

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PTVA104501EH-V1-R250 Datasheet HTML 10Page - WOLFSPEED, INC.

PTVA104501EH-V1-R250 产品详情

Description
The PTVA104501EH LDMOS FET is designed for use in power amplifier
applications in the 960 to 1215 MHz frequency band. Features include
high gain and thermally-enhanced package with bolt-down flange.
Manufactured with Wolfspeed's advanced LDMOS process, this device
provides excellent thermal performance and superior reliability
Features
• Broadband internal input and output matching
• High gain and efficiency
• Integrated ESD protection
• Human Body Model Class 2 (per ANSI/ESDA/JEDEC
JS-001)
• Low thermal resistance
• Excellent ruggedness
• Pb-free and RoHS compliant
• Capable of withstanding a 10:1 load mismatch
(all phase angles) at 450 W peak under RF pulse,
128 µS, 10% duty cycle.

类似零件编号 - PTVA104501EH-V1-R250

制造商	部件名	数据表	功能描述
Infineon Technologies A...	PTVA104501EH	189Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET Rev. 02, 2014-07-22
Infineon Technologies A...	PTVA104501EH	1Mb / 9P	Thermally-Enhanced High Power RF LDMOS FET 450 W, 50 V, 960 ??1215 MHz Rev. 02.1, 2016-04-19
Cree, Inc	PTVA104501EH	430Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 450 W, 50 V, 960 ??1215 MHz
Infineon Technologies A...	PTVA104501EHV1R0	1Mb / 9P	Thermally-Enhanced High Power RF LDMOS FET 450 W, 50 V, 960 ??1215 MHz Rev. 02.1, 2016-04-19
Infineon Technologies A...	PTVA104501EHV1R0XTMA1	1Mb / 9P	Thermally-Enhanced High Power RF LDMOS FET 450 W, 50 V, 960 ??1215 MHz Rev. 02.1, 2016-04-19

类似说明 - PTVA104501EH-V1-R250

制造商	部件名	数据表	功能描述
Infineon Technologies A...	PTVA104501EH	1Mb / 9P	Thermally-Enhanced High Power RF LDMOS FET 450 W, 50 V, 960 ??1215 MHz Rev. 02.1, 2016-04-19
	PTVA093002TC	210Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 300 W, 50 V, 703 ??960 MHz Rev. 04, 2014-06-16
	PTVA035002EV	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 ??450 MHz Rev. 05.2, 2016-06-08
	PTVA030121EA	874Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 ??450 MHz Rev. 05.1, 2016-04-19
	PTVA102001EA	241Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 200 W, 50 V, 960 ??1600 MHz Rev. 03, 2017-08-17
Cree, Inc	PTVA030121EA	423Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 ??450 MHz
	PTVA035002EV	462Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 ??450 MHz
	PTVA102001EA	451Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 200 W, 50 V, 960 ??1600 MHz
	PTVA104501EH	430Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 450 W, 50 V, 960 ??1215 MHz
WOLFSPEED, INC.	PTVA102001EA	540Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 200 W, 50 V, 960 – 1600 MHz Rev. 05, 2023-07-10

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