| 制造商 | 部件名 | 数据表 | 功能描述 |
 Infineon Technologies A... |
PXAC182002FC
|
1Mb / 8P |
Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 ??1880 MHz
Rev. 02.3, 2016-06-17 |
|
PXAC200902FC
|
489Kb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 90 W, 28 V, 1805 ??2170 MHz
Rev. 02.1, 2016-02-11 |
|
PXAC210552FC
|
206Kb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz
Rev. 02, 2015-12-04 |
|
PXAC210552MD
|
466Kb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz
Rev. 03.1, 2017-01-25 |
|
PXAC210552ND
|
466Kb / 9P |
Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz
Rev. 04.1, 2017-01-09 |
 Cree, Inc |
PXAE184408NB
|
1Mb / 6P |
Thermally-Enhanced High Power RF LDMOS FET 450 W, 28 V, 1805 ??1880 MHz
|
|
PXAC182002FC
|
495Kb / 8P |
Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 ??1880 MHz
|
|
PXAC210552FC
|
600Kb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz
|
|
PTAC210802FC
|
719Kb / 9P |
Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 1805 ??2170 MHz
|
|
PXAC200902FC
|
600Kb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 90 W, 28 V, 1805 - 2170 MHz
|