PXAD214218FV-V1-R2 数据表(PDF) - WOLFSPEED, INC.

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PXAD214218FV-V1-R2 数据表 (PDF) - WOLFSPEED, INC.

PXAD214218FV-V1-R2 Datasheet PDF - WOLFSPEED, INC.


部件名	PXAD214218FV-V1-R2

下载	PXAD214218FV-V1-R2 下载

文件大小	524.08 Kbytes

页	9 Pages

制造商	WOLFSPEED [WOLFSPEED, INC.]

网页	https://www.wolfspeed.com/

标志

功能描述	Thermally-Enhanced High Power RF LDMOS FET 430 W, 28 V, 2110 – 2170 MHz

PXAD214218FV-V1-R2 Datasheet (PDF)

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PXAD214218FV-V1-R2 Datasheet PDF - WOLFSPEED, INC.


部件名	PXAD214218FV-V1-R2

下载	PXAD214218FV-V1-R2 Click to download

文件大小	524.08 Kbytes

页	9 Pages

制造商	WOLFSPEED [WOLFSPEED, INC.]

网页	https://www.wolfspeed.com/

标志

功能描述	Thermally-Enhanced High Power RF LDMOS FET 430 W, 28 V, 2110 – 2170 MHz

PXAD214218FV-V1-R2 数据表 (HTML) - WOLFSPEED, INC.

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PXAD214218FV-V1-R2 产品详情

Description
The PXAD214218FV is a 430-watt (P3dB) LDMOS FET with an asymmetrical
design intended for use in multi-standard cellular power amplifier
applications in the 2110 to 2170 MHz frequency band. Features
include dual-path design, input and output matching, high gain and
thermally-enhanced package with earless flanges. Manufactured
with Wolfspeed's advanced LDMOS process, this device provides
excellent thermal performance and superior reliability.
Features
• Broadband internal input and output matching
• Asymmetrical Doherty design
- Main : P1dB = 130 W Typ
- Peak : P1dB = 290 W Typ
• Typical Pulsed CW performance, 2140 MHz, 28 V,
Doherty configuration
- Output power at P3dB = 436 W
- Efficiency = 55%
- Gain = 13.5 dB
• Capable of handling 10:1 VSWR @28 V, 110 W (WCDMA)
output power
• Integrated ESD protection
• Human Body Model class 2 (per ANSI/ESDA/
JEDEC JS-001)
• Low thermal resistance
• Pb-free and RoHS compliant

类似零件编号 - PXAD214218FV-V1-R2

制造商	部件名	数据表	功能描述
Infineon Technologies A...	PXAD214218FV	391Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 430 W, 28 V, 2110 ??2170 MHz Rev. 02.2, 2017-03-30
Cree, Inc	PXAD214218FV	524Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 430 W, 28 V, 2110 ??2170 MHz

类似说明 - PXAD214218FV-V1-R2

制造商	部件名	数据表	功能描述
Infineon Technologies A...	PXFC211507SC	201Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2110 ??2170 MHz Rev. 02, 2015-03-03
	PTFB213208FV	221Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ??2170 MHz Rev. 02, 2012-07-03
	PTFB212507SH	193Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 ??2170 MHz Rev. 03, 2015-10-30
	PTAC210802FC	650Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 ??2170 MHz Rev. 05.2, 2016-06-17
	PXAD214218FV	391Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 430 W, 28 V, 2110 ??2170 MHz Rev. 02.2, 2017-03-30
Cree, Inc	PXAD214218FV	524Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 430 W, 28 V, 2110 ??2170 MHz
	PTFB210801FA	636Kb / 11P	Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 ??2170 MHz
	PTFB213208FV	659Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 - 2170 MHz
	PXFE211507FC	587Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 170 W, 28 V, 2110 ??2170 MHz
WOLFSPEED, INC.	PXFE211507FC	763Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 170 W, 28 V, 2110 – 2170 MHz Rev. 04, 2023-06-28

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