PXAE261908NF 数据表(PDF) - WOLFSPEED, INC.

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PXAE261908NF 数据表 (PDF) - WOLFSPEED, INC.

PXAE261908NF Datasheet PDF - WOLFSPEED, INC.


部件名	PXAE261908NF

下载	PXAE261908NF 下载

文件大小	568.86 Kbytes

页	9 Pages

制造商	WOLFSPEED [WOLFSPEED, INC.]

网页	https://www.wolfspeed.com/

标志

功能描述	Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 2515 – 2675 MHz

PXAE261908NF Datasheet (PDF)

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PXAE261908NF Datasheet PDF - WOLFSPEED, INC.


部件名	PXAE261908NF

下载	PXAE261908NF Click to download

文件大小	568.86 Kbytes

页	9 Pages

制造商	WOLFSPEED [WOLFSPEED, INC.]

网页	https://www.wolfspeed.com/

标志

功能描述	Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 2515 – 2675 MHz

PXAE261908NF 数据表 (HTML) - WOLFSPEED, INC.

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PXAE261908NF 产品详情

Description
The PXAE261908NF is a 240-watt (P3dB) LDMOS FET intended for use in
multi-standard cellular power amplifier applications in the 2515 to 2675
MHz frequency band. Features include input and output matching, high
gain and a thermally-enhanced package with earless flange. Manufactured
with Wolfspeed's advanced LDMOS process, this device provides excellent
thermal performance and superior reliability.
Features
• Broadband internal input and output matching
• Asymmetric Doherty design
- Main: P3dB = 90 W typical
- Peak: P3dB = 180 W typical
• Typical pulsed CW performance, 2675 MHz, 28 V
- Output power at P1dB = 51 W
- Output power at P3dB = 240 W
- Gain = 11.8 dB
- Efficiency = 60%
• Capable of handling 10:1 VSWR at 28 V, 32 W (CW)
output power
• Integrated ESD protection
• Human Body Model, Class 2 (per ANSI/ESDA/JEDEC
JS-001)
• Low thermal resistance
• Pb-free and RoHS compliant

类似零件编号 - PXAE261908NF

制造商	部件名	数据表	功能描述
Cree, Inc	PXAE263708NB	289Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 400 W (P3dB), 28 V, 2620 ??2690 MHz
WOLFSPEED, INC.	PXAE263708NB	612Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 400 W (P3dB), 28 V, 2620 – 2690 MHz Rev. 04, 2023-06-23
Cree, Inc	PXAE263708NB-V1-R2	289Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 400 W (P3dB), 28 V, 2620 ??2690 MHz
WOLFSPEED, INC.	PXAE263708NB-V1-R2	612Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 400 W (P3dB), 28 V, 2620 – 2690 MHz Rev. 04, 2023-06-23

类似说明 - PXAE261908NF

制造商	部件名	数据表	功能描述
Infineon Technologies A...	PTFA142401EL	449Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 1450 ??1500 MHz Rev. 04, 2009-07-16
	PXAC192908FV	1Mb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1930 ??1995 MHz Rev. 02.3, 2016-06-17
	PTFC210202FC	655Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz Rev. 03.4, 2016-06-22
Cree, Inc	PXAC182908FV	515Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1805 ??1880 MHz
	PXAC192908FV	525Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1930 ??1995 MHz
	PTFB192503FL	531Kb / 14P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 1930 ??1990 MHz
	PTFB182503FL	497Kb / 11P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 1805 ??1880 MHz
	PTFC210202FC	700Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 - 2200 MHz
WOLFSPEED, INC.	PTFC210202FC-V1	828Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Rev. 06, 2023-06-28
WOLFSPEED, INC.	GTRA260502M	762Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 2515 – 2675 MHz Rev. 04. 2023-06-26

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