| 制造商 | 部件名 | 数据表 | 功能描述 |
 Infineon Technologies A... |
PXFC192207FH
|
1Mb / 9P |
Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 ??1990 MHz
Rev. 04.1, 2016-06-22 |
|
PXFC191507FC
|
1Mb / 8P |
Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 1805 ??1990 MHz
Rev. 02.1, 2016-06-22 |
|
PXAC182002FC
|
1Mb / 8P |
Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 ??1880 MHz
Rev. 02.3, 2016-06-17 |
|
PXAC200902FC
|
489Kb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 90 W, 28 V, 1805 ??2170 MHz
Rev. 02.1, 2016-02-11 |
 Cree, Inc |
PXAE184408NB
|
1Mb / 6P |
Thermally-Enhanced High Power RF LDMOS FET 450 W, 28 V, 1805 ??1880 MHz
|
|
PXAC182002FC
|
495Kb / 8P |
Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 ??1880 MHz
|
|
PXAC210552FC
|
600Kb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz
|
|
PXFC191507FC
|
517Kb / 8P |
Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 1805 ??1990 MHz
|
|
PXFC192207FH
|
662Kb / 9P |
Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 - 1990 MHz
|
 WOLFSPEED, INC. |
PXFC191507FC
|
1Mb / 8P |
Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 1805 – 1990 MHz
Rev. 04, 2023-06-28 |