IKZA75N65EH7 数据表(PDF) - Infineon Technologies AG

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IKZA75N65EH7 数据表 (PDF) - Infineon Technologies AG

IKZA75N65EH7 Datasheet PDF - Infineon Technologies AG


部件名	IKZA75N65EH7

下载	IKZA75N65EH7 下载

文件大小	2164.48 Kbytes

页	17 Pages

制造商	INFINEON [Infineon Technologies AG]

网页	http://www.infineon.com

标志

功能描述	High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

IKZA75N65EH7 Datasheet (PDF)

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IKZA75N65EH7 Datasheet PDF - Infineon Technologies AG


部件名	IKZA75N65EH7

下载	IKZA75N65EH7 Click to download

文件大小	2164.48 Kbytes

页	17 Pages

制造商	INFINEON [Infineon Technologies AG]

网页	http://www.infineon.com

标志

功能描述	High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

IKZA75N65EH7 数据表 (HTML) - Infineon Technologies AG

IKZA75N65EH7 产品详情

Features
• VCE = 650 V
• IC = 75 A
• Low switching losses
• Very low collector-emitter saturation voltage VCEsat
• Very soft, fast recovery antiparallel diode
• Smooth switching behavior
• Humidity robustness
• Optimized for hard switching, two- and three-level topologies
• Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/

类似零件编号 - IKZA75N65EH7

制造商	部件名	数据表	功能描述
Infineon Technologies A...	IKZA75N65RH5	1Mb / 15P	TRENCHSTOPTM 5 H5 IGBT co-packed with half-rated 6th generation CoolSiCTM Schottky barrier diode V2.1 2020-07-27
Infineon Technologies A...	IKZA75N65SS5	1Mb / 15P	TRENCHSTOPTM 5 S5 IGBT co-packed with full-rated 6th generation CoolSiCTM Schottky barrier diode V2.2 2020-07-29

类似说明 - IKZA75N65EH7

制造商	部件名	数据表	功能描述
Infineon Technologies A...	IKQ120N65EH7	2Mb / 17P	High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode Revision 1.10 2023-04-27
	IKQ150N65EH7	1Mb / 17P	High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode Revision 1.10 2023-04-25
	IKWH100N65EH7	2Mb / 17P	High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode Revision 1.00 2023-04-27
	IKWH40N65EH7	1Mb / 17P	High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode Revision 1.10 2023-04-25
	IKWH50N65EH7	2Mb / 17P	High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode Revision 1.00 2023-04-27
	IKWH75N65EH7	2Mb / 17P	High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode Revision 1.10 2023-04-27
	IKY120N65EH7	2Mb / 17P	High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode Revision 1.00 2023-04-27
	IKY150N65EH7	1Mb / 17P	High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode Revision 1.00 2023-04-27
	IKZA40N65EH7	1Mb / 17P	High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode Revision 1.00 2023-04-27
	IKZA50N65EH7	1Mb / 17P	High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode Revision 1.00 2023-04-27

关于 Infineon Technologies AG

Infineon Technologies是一家领先的全球半导体制造商，专门为汽车，工业和通信系统等各种行业提供电力管理，安全和控制解决方案。
该公司成立于1999年，总部位于德国Neubiberg。
Infineon提供各种产品，包括微控制器，功率半导体，传感器和其他集成电路。
该公司在全球市场拥有强大的业务，在世界各地拥有运营和设施。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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