Power MOSFET ISOPLUS220TM
Electrically Isolated Back Surface
   
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
   
Features
• Silicon chip on Direct-Copper-Bond
    substrate
    - High power dissipation
    - Isolated mounting surface
    - 2500V electrical isolation
• Low drain to tab capacitance(<35pF)
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
    rated
   
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
    power supplies
• DC choppers
• AC motor control
   
Advantages
• Easy assembly: no screws or isolation
    foils required
• Space savings
• High power density
• Low collector capacitance to ground
    (low EMI)