| 制造商 | 部件名 | 数据表 | 功能描述 |
 NXP Semiconductors |
BF510
|
37Kb / 7P |
N-channel silicon field-effect transistors
December 1997 |
 Vaishali Semiconductor |
3N187
|
486Kb / 8P |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR
|
 Intersil Corporation |
3N200
|
383Kb / 6P |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR
|
 List of Unclassifed Man... |
3N142
|
278Kb / 5P |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR
|
|
3N153
|
148Kb / 3P |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR
|
 Motorola, Inc |
MFE212
|
496Kb / 5P |
N-CHANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS
|
 New Jersey Semi-Conduct... |
3N128
|
153Kb / 1P |
N-CHANNEL INSULATED-GATE DEPLETION-TYPE FIELD-EFFECT TRANSISTOR
|
 Digitron Semiconductors |
MFE211
|
1Mb / 5P |
N-CHANNEL DUAL GATE SILICON NITRIDE PASSIVATED MOS FIELD EFFECT TRANSISTORS
|
|
3N209
|
820Kb / 5P |
N-CHANNEL DUAL GATE MOS FIELD EFFECT TRANSISTORS
|
 New Jersey Semi-Conduct... |
MFE211
|
98Kb / 2P |
N-. HANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS
|