Description
The device in a PNP transistor manufactured using new “PB-HDC” (Power Bipolar High Density Current) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.

General features
■ Very low Collector to Emitter saturation voltage
■ D.C. Current gain, hFE >100
■ 1.5 A continuous collector current
■ In compliance with the 2002/93/EC European Directive

Applications
■ Power management in portable equipment
■ Switching regulator in battery charger applications