Description
The SST38VF6401B, SST38VF6402B, SST38VF6403B,
and SST38VF6404B devices are 4M x16 CMOS
Advanced Multi-Purpose Flash Plus (Advanced MPF+)
manufactured with Microchip proprietary, high-performance
CMOS SuperFlash technology. The split-gate cell
design and thick-oxide tunneling injector attain better reliability
and manufacturability compared with alternate
approaches. The SST38VF6401B/6402B/6403B/6404B
write (Program or Erase) with a 2.7-3.6V power supply.
These devices conform to JEDEC standard pin assignments
for x16 memories.
Featuring high performance Word-Program, the
SST38VF6401B/6402B/6403B/6404B provide a typical
Word-Program time of 7 μsec. For faster word-programming
performance, the Write-Buffer Programming
feature, has a typical word-program time of 1.75 μsec.
These devices use Toggle Bit, Data# Polling, or the RY/
BY# pin to indicate Program operation completion. In
addition to single-word Read, Advanced MPF+ devices
provide a Page-Read feature that enables a faster
word read time of 25 ns, eight words on the same page.
To protect against inadvertent write, the
SST38VF6401B/6402B/6403B/6404B have on-chip
hardware and Software Data Protection schemes.
Designed, manufactured, and tested for a wide spectrum
of applications, these devices are available with
100,000 cycles minimum endurance. Data retention is
rated at greater than 100 years.
The SST38VF6401B/6402B/6403B/6404B are suited for
applications that require the convenient and economical
updating of program, configuration, or data memory.
For all system applications, Advanced MPF+
significantly improve performance and reliability, while
lowering power consumption. These devices inherently
use less energy during Erase and Program than alternative
flash technologies. The total energy consumed
is a function of the applied voltage, current, and time of
application. For any given voltage range, the Super-
Flash technology uses less current to program and has
a shorter erase time; therefore, the total energy consumed
during any Erase or Program operation is less
than alternative flash technologies.
These devices also improve flexibility while lowering
the cost for program, data, and configuration storage
applications. The SuperFlash technology provides
fixed Erase and Program times, independent of the
number of Erase/Program cycles that have occurred.
Therefore, the system software or hardware does not
have to be modified or de-rated as is necessary with
alternative flash technologies, whose Erase and Program
times increase with accumulated Erase/Program cycles.
The SST38VF6401B/6402B/6403B/6404B also offer
flexible data protection features. Applications that
require memory protection from program and erase
operations can use the Boot Block, Individual Block
Protection, and Advanced Protection features. For
applications that require a permanent solution, the Irreversible
Block Locking feature provides permanent
protection for memory blocks.

Features
• Organized as 4M x16
• Single Voltage Read and Write Operations
- 2.7-3.6V
• Superior Reliability
- Endurance: 100,000 Cycles minimum
- Greater than 100 years Data Retention
• Low Power Consumption (typical values at 5 MHz)
- Active Current: 25 mA (typical)
- Standby Current: 5 μA (typical)
- Auto Low Power Mode: 5 μA (typical)
• 128-bit Unique ID
• Security-ID Feature
- 248 Word, user One-Time-Programmable
• Protection and Security Features
- Hardware Boot Block Protection/WP# Input Pin,
Uniform (32 KWord), and Non-Uniform
(8 KWord) options available
- User-controlled individual block (32 KWord) protection,
using software only methods
- Password protection
• Hardware Reset Pin (RST#)
• Fast Read and Page Read Access Times:
- 70 ns Read access time
- 25 ns Page Read access times
- 8-Word Page Read buffer
• Latched Address and Data
• Fast Erase Times:
- Block-Erase Time: 18 ms (typical)
- Chip-Erase Time: 40 ms (typical)
• Erase-Suspend/-Resume Capabilities
• Fast Word and Write-Buffer Programming Times:
- Word-Program Time: 7 μs (typical)
- Write Buffer Programming Time: 1.75 μs / Word
(typical)
- 16-Word Write Buffer
• Automatic Write Timing
- Internal VPP Generation
• End-of-Write Detection
- Toggle Bits
- Data# Polling
- RY/BY# Output
• CMOS I/O Compatibility
• JEDEC Standard
- Flash EEPROM Pinouts and command sets
• CFI Compliant
• Packages Available
- 48-lead TSOP
- 48-ball TFBGA
• All non-Pb (lead-free) devices are RoHS compliant