The SST38VF6401/6402/6403/6404 are 4M x16 CMOS Advanced Multi-Purpose
Flash Plus (Advanced MPF+) devices manufactured with proprietary, high-performance
CMOS Super- Flash technology. The split-gate cell design and thick-oxide
tunneling injector attain better reliability and manufacturability compared with
alternate approaches. The SST38VF6401/6402/6403/6404 write (Program or
Erase) with a 2.7-3.6V power supply. This device conforms to JEDEC standard
pin assignments for x16 memories.

Features
• Organized as 4M x16
• Single Voltage Read and Write Operations
– 2.7-3.6V
• Superior Reliability
– Endurance: 100,000 Cycles minimum
– Greater than 100 years Data Retention3
• Low Power Consumption (typical values at 5 MHz)
– Active Current: 4 mA (typical)
– Standby Current: 3 μA (typical)
– Auto Low Power Mode: 3 μA (typical)
• 128-bit Unique ID
• Security-ID Feature
– 256 Word, user One-Time-Programmable
• Protection and Security Features
– Hardware Boot Block Protection/WP# Input Pin, Uniform
(32 KWord) and Non-Uniform (8 KWord) options
available
– User-controlled individual block (32 KWord) protection,
using software only methods
– Password protection
• Hardware Reset Pin (RST#)
• Fast Read and Page Read Access Times:
– 90 ns Read access time
– 25 ns Page Read access times
- 4-Word Page Read buffer
• Latched Address and Data
• Fast Erase Times:
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 40 ms (typical)
• Erase-Suspend/-Resume Capabilities
• Fast Word and Write-Buffer Programming Times:
– Word-Program Time: 7 μs (typical)
– Write Buffer Programming Time: 1.75 μs / Word (typical)
- 16-Word Write Buffer
• Automatic Write Timing
– Internal VPP Generation
• End-of-Write Detection
– Toggle Bits
– Data# Polling
– RY/BY# Output
• CMOS I/O Compatibility
• JEDEC Standard
– Flash EEPROM Pinouts and command sets
• CFI Compliant
• Packages Available
– 48-lead TSOP
– 48-ball TFBGA
• All devices are RoHS compliant