1 Features
• 650-V GaN-on-Si FET with integrated gate driver
– Integrated high precision gate bias voltage
– 200-V/ns FET hold-off
– 3.6-MHz switching frequency
– 15-V/ns to 150-V/ns slew rate for optimization
of switching performance and EMI mitigation
– Operates from 7.5-V to 18-V supply
• Robust protection
– Cycle-by-cycle overcurrent and latched shortcircuit
protection with < 100-ns response
– Withstands 720-V surge while hard-switching
– Self-protection from internal overtemperature
and UVLO monitoring
• Advanced power management
– Digital temperature PWM output
• Top-side cooled 12-mm × 12-mm VQFN package
separates electrical and thermal paths for lowest
power loop inductance

2 Applications
• Switch-mode power converters
• Merchant network and server PSU
• Merchant telecom rectifiers
• Solar inverters and industrial motor drives
• Uninterruptible power supplies

3 Description
The LMG3522R050 GaN FET with integrated driver
and protections is targeting switch-mode power
converters and enables designers to achieve new
levels of power density and efficiency.
The LMG3522R050 integrates a silicon driver that
enables switching speed up to 150 V/ns. TI’s
integrated precision gate bias results in higher
switching SOA compared to discrete silicon gate
drivers. This integration, combined with TI's lowinductance
package, delivers clean switching and
minimal ringing in hard-switching power supply
topologies. Adjustable gate drive strength allows
control of the slew rate from 15 V/ns to 150 V/ns,
which can be used to actively control EMI and
optimize switching performance.
Advanced power management features include digital
temperature reporting and fault detection. The
temperature of the GaN FET is reported through
a variable duty cycle PWM output, which simplifies
managing device loading. Faults reported include
overtemperature, overcurrent, and UVLO monitoring.