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TC5501P 数据表 (PDF) - Toshiba Semiconductor

TC5501P Datasheet PDF - Toshiba Semiconductor
部件名 TC5501P
下载  TC5501P 下载
文件大小   156.3 Kbytes
  8 Pages
制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor
功能描述 256 WORD x 4 BIT CMOS RAM

TC5501P Datasheet (PDF)

Go To PDF Page 下载 数据表
TC5501P Datasheet PDF - Toshiba Semiconductor

部件名 TC5501P
下载  TC5501P Click to download

文件大小   156.3 Kbytes
  8 Pages
制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor
功能描述 256 WORD x 4 BIT CMOS RAM

TC5501P 数据表 (HTML) - Toshiba Semiconductor


TC5501P 产品详情

DESCRIPTION

The TC5501P/D is a fully static read write memory
organized as 256 words by 4 bits using CMOS tech-
nology. Because of ultra low power dissipation, the
TC5501P/D can be used as battery operated portable
memory system and also as a nonvolatile memory
with battery back up. The TC5501P/D operates from
a single BV power supply with a static operation, so
that the no refresh periods are required. This simpli-
fies the power supply circuit design.
The three state outputs simplify the memory ex-
pansion making the TC5501P/D suitable for use in a
microprocessor peripheral memory. Since the mini-
mum data retention voltage is 2V, the battery back
up system needsonly simple circuit. By using Toshiba's
original C*MOS technology, the device circuitry is
not only simplified but wide operating margin and
noise margin are also realized.

The TC5501P/Dis offered in standard 22 pin plastic
and cerdip packages, 0.4 inch in width.

FEATURES

® Low Power Dissipation

- 55uW (MAX.} STANDBY

- 83mW (MAX.) OPERATING
e Single 5V Power Supply
o Data Retention Voltage 2V to 5.5V
e Package

- Plastic DIP : TC5501P

- Cerdip DIP : TC5501D

e Fully static operation
e Three State Output
e Input/output, TTL Compatible
® Access Time
TCS501P/D ; tACC S 450ns (MAX)
TCBB01P-1/D-1; tacC S 650ns (MAX.)




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