1 Description
These N-channel Enhanced VDMOSFETs, is obtained by
the self-aligned planar technology which reduce the
conduction loss, improve switching performance and
enhance the avalanche energy. Which accords with the
RoHS standard.

2 Features
● Fast Switching
● Low ON Resistance(Rdson≤0.4Ω)
● Low Gate Charge(Typical Data:22nC)
● Low Reverse Transfer Capacitances(Typical:22pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test

3 Applications
● High efficiency switch mode power supplies.
● Electronic lamp ballasts based on half bridge.
● UPS
● Inverter