NXH007F120M3F2PTHG 数据表(PDF) - ON Semiconductor

数据搜索系统，热门电子元器件搜索

ALLDATASHEETCN.COM

X

NXH007F120M3F2PTHG 数据表 (PDF) - ON Semiconductor

NXH007F120M3F2PTHG Datasheet PDF - ON Semiconductor


部件名	NXH007F120M3F2PTHG

下载	NXH007F120M3F2PTHG 下载

文件大小	502.81 Kbytes

页	11 Pages

制造商	ONSEMI [ON Semiconductor]

网页	http://www.onsemi.com

标志

功能描述	Silicon Carbide (SiC) Module – EliteSiC, 7 mohm, 1200 V, SiC M3S MOSFET, Full Bridge, F2 Package

NXH007F120M3F2PTHG Datasheet (PDF)

Go To PDF Page

下载数据表

NXH007F120M3F2PTHG Datasheet PDF - ON Semiconductor


部件名	NXH007F120M3F2PTHG

下载	NXH007F120M3F2PTHG Click to download

文件大小	502.81 Kbytes

页	11 Pages

制造商	ONSEMI [ON Semiconductor]

网页	http://www.onsemi.com

标志

功能描述	Silicon Carbide (SiC) Module – EliteSiC, 7 mohm, 1200 V, SiC M3S MOSFET, Full Bridge, F2 Package

NXH007F120M3F2PTHG 数据表 (HTML) - ON Semiconductor

NXH007F120M3F2PTHG Datasheet HTML 1Page - ON Semiconductor

NXH007F120M3F2PTHG Datasheet HTML 2Page - ON Semiconductor

NXH007F120M3F2PTHG Datasheet HTML 3Page - ON Semiconductor

NXH007F120M3F2PTHG Datasheet HTML 4Page - ON Semiconductor

NXH007F120M3F2PTHG Datasheet HTML 5Page - ON Semiconductor

NXH007F120M3F2PTHG Datasheet HTML 6Page - ON Semiconductor

NXH007F120M3F2PTHG Datasheet HTML 7Page - ON Semiconductor

NXH007F120M3F2PTHG Datasheet HTML 8Page - ON Semiconductor

NXH007F120M3F2PTHG Datasheet HTML 9Page - ON Semiconductor

NXH007F120M3F2PTHG Datasheet HTML 10Page - ON Semiconductor

NXH007F120M3F2PTHG 产品详情

The NXH007F120M3F2PTHG is a power module containing
7 m/ 1200 V SiC MOSFET full−bridge and a thermistor with HPS
DBC in an F2 package.
Features
• 7 m / 1200 V M3S SiC MOSFET Full−Bridge
• HPS DBC
• Thermistor
• Options with Pre−Applied Thermal Interface Material (TIM) and
without Pre−Applied TIM
• Press−Fit Pins
• These Devices are Pb−Free, Halide Free and are RoHS Compliant
Typical Applications
• Solar Inverter
• Uninterruptible Power Supplies
• Electric Vehicle Charging Stations
• Industrial Power

类似零件编号 - NXH007F120M3F2PTHG

制造商	部件名	数据表	功能描述
ON Semiconductor	NXH003P120M3F2PTHG	2Mb / 13P	Silicon Carbide (SiC) Module – EliteSiC, 3 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with HPS DBC April, 2023 - Rev. P1
	NXH003P120M3F2PTNG	2Mb / 13P	Silicon Carbide (SiC) Module – EliteSiC, 3 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with Si3N4 DBC July, 2023 - Rev. 0
	NXH004P120M3F2PTHG	2Mb / 13P	Silicon Carbide (SiC) Module – EliteSiC, 4 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with HPS DBC April, 2023 - Rev. P1
	NXH004P120M3F2PTNG	2Mb / 13P	Silicon Carbide (SiC) Module – EliteSiC, 4 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with Si3N4 DBC July, 2023 - Rev. 0
	NXH006P120M3F2PTHG	407Kb / 12P	Silicon Carbide (SiC) Module – EliteSiC, 6 mohm, 1200 V, SiC M3 MOSFET, 2-PACK Half Bridge Topology, F2 Package with HPS DBC November, 2023 - Rev. 0

类似说明 - NXH007F120M3F2PTHG

制造商	部件名	数据表	功能描述
ON Semiconductor	NXH006P120MNF2PTG	1Mb / 10P	Silicon Carbide (SiC) Module – EliteSiC, 6 mohm SiC M1 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package February, 2023 - Rev. 4
	NXH020F120MNF1PTG	1Mb / 13P	Silicon Carbide (SiC) Module – EliteSiC, 20 mohm SiC M1 MOSFET, 1200 V, 4-PACK Full Bridge Topology, F1 Package February, 2023 - Rev. P1
	NXH040F120MNF1PTG	1Mb / 13P	Silicon Carbide (SiC) Module – EliteSiC, 40 mohm SiC M1 MOSFET, 1200 V, 4-PACK Full Bridge Topology, F1 Package February, 2023 - Rev. P2
	NXH80B120MNQ0SNG	679Kb / 13P	Silicon Carbide (SiC) Module – EliteSiC, 80 mohm SiC M1 MOSFET, 1200 V 20 A, 1200 V SiC Diode, Two Channel Full SiC Boost, Q0 Package February, 2023 - Rev. P2
	NXH004P120M3F2PTHG	2Mb / 13P	Silicon Carbide (SiC) Module – EliteSiC, 4 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with HPS DBC April, 2023 - Rev. P1
	NXH003P120M3F2PTNG	2Mb / 13P	Silicon Carbide (SiC) Module – EliteSiC, 3 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with Si3N4 DBC July, 2023 - Rev. 0
	NXH004P120M3F2PTNG	2Mb / 13P	Silicon Carbide (SiC) Module – EliteSiC, 4 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with Si3N4 DBC July, 2023 - Rev. 0
	NXH008T120M3F2PTHG	1Mb / 16P	Silicon Carbide (SiC) Module – 8 mohm SiC M3S MOSFET, 1200 V, TNPC Topology, F2 Package August, 2023 - Rev. P1
	NXH006P120M3F2PTHG	407Kb / 12P	Silicon Carbide (SiC) Module – EliteSiC, 6 mohm, 1200 V, SiC M3 MOSFET, 2-PACK Half Bridge Topology, F2 Package with HPS DBC November, 2023 - Rev. 0
	NXH011F120M3F2PTHG	518Kb / 12P	Silicon Carbide (SiC) Module – EliteSiC, 11 mohm, 1200 V, SiC M3S MOSFET, Full Bridge, F2 Package November, 2023 - Rev. P1

关于 ON Semiconductor

“安森美半导体家公开交易的公司，该公司设计，开发和生产各种半导体产品，用于各种应用，包括汽车，计算，消费品，工业和通信市场。
该公司成立于1999年，总部位于亚利桑那州凤凰城。
在半导体上，提供了广泛的电力管理，模拟和离散半导体的组合，包括电源MOSFET，二极管，整流器，电压调节器等。
该公司的产品旨在具有节能，可靠和成本效益，并用于多种应用，包括便携式电子产品，工业自动化系统，可再生能源系统和汽车电子产品。
在半导体上，致力于创新和客户满意度，并致力于提供最佳的半导体解决方案，以满足客户的需求。”

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

链接网址

ALLDATASHEET是否为您带来帮助? [ DONATE ]

关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单
All Rights Reserved©Alldatasheet.com

Mirror Sites English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz

Family Site : ic2ic.com | icmetro.com