2N5109 数据表(PDF) - Advanced Power Technology

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2N5109 数据表 (PDF) - Advanced Power Technology

2N5109 Datasheet PDF - Advanced Power Technology


部件名	2N5109

下载	2N5109 下载

文件大小	318.56 Kbytes

页	5 Pages

制造商	ADPOW [Advanced Power Technology]

网页	http://www.advpowertech.com

标志

功能描述	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

2N5109 Datasheet (PDF)

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2N5109 Datasheet PDF - Advanced Power Technology


部件名	2N5109

下载	2N5109 Click to download

文件大小	318.56 Kbytes

页	5 Pages

制造商	ADPOW [Advanced Power Technology]

网页	http://www.advpowertech.com

标志

功能描述	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

2N5109 数据表 (HTML) - Advanced Power Technology

2N5109 Datasheet HTML 1Page - Advanced Power Technology

2N5109 Datasheet HTML 2Page - Advanced Power Technology

2N5109 Datasheet HTML 3Page - Advanced Power Technology

2N5109 Datasheet HTML 4Page - Advanced Power Technology

2N5109 Datasheet HTML 5Page - Advanced Power Technology

2N5109 产品详情

DESCRIPTION:

The 2N5109 is a silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. It is also suitable for oscillator and frequency-multiplier functions.

Features

· Silicon NPN, To-39 packaged VHF/UHF Transistor

· 1.2 GHz Current-Gain Bandwidth Product @ 50mA

· Maximum Unilateral Gain = 12dB (typ) @ 200 MHz

类似零件编号 - 2N5109

制造商	部件名	数据表	功能描述
Semicoa Semiconductor	2N5109	31Kb / 1P	Chip Type 2C5109 Geometry 1007 Polarity NPN
Semicoa Semiconductor	2N5109	47Kb / 2P	Type 2N5109 Geometry 1007 Polarity NPN
Microsemi Corporation	2N5109	281Kb / 5P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Central Semiconductor C...	2N5109	56Kb / 1P	Small Signal Transistors
List of Unclassifed Man...	2N5109	245Kb / 3P	silicon transistors UHF/VHF power transistors

类似说明 - 2N5109

制造商	部件名	数据表	功能描述
Microsemi Corporation	2N6304	86Kb / 4P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
	BFR91	170Kb / 5P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
	BFY90	84Kb / 4P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
	MRF559	208Kb / 5P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
	MRF5812	173Kb / 5P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
	MRF5943	174Kb / 5P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Advanced Power Technolo...	BFR90	120Kb / 5P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
	BFR91	120Kb / 5P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
	MRF581	282Kb / 6P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
	MRF544	302Kb / 4P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

关于 Advanced Power Technology

Advanced Power Technology (APT) is a semiconductor company that designs, manufactures and sells power MOSFETs and IGBTs (Insulated Gate Bipolar Transistors). The company was founded in 1986 and is headquartered in Bend, Oregon, USA.

APT's products are used in a wide range of applications, including automotive, industrial, communications, and consumer electronics. The company offers a wide range of MOSFETs and IGBTs with different voltage and current ratings, package options and other features to meet the specific needs of its customers.

APT is known for its commitment to quality and innovation. The company's products are designed to meet the highest standards of performance and reliability, and are manufactured using the latest technology and materials. APT also offers custom design and engineering services to meet the specific needs of its customers.

APT has a global presence, with sales offices and representatives located around the world. The company is dedicated to delivering innovative and reliable power MOSFETs and IGBTs that meet the evolving needs of the electronics industry. In 2000, APT was acquired by Microsemi Corporation, which later became part of Microchip Technology Inc.

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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