DESCRIPTION
The BUB806/807 and BUBO6FI/807F! are silicon
epitaxial planar NPN power transistors in Dar-
lington configuration with integrated base-emitter
speed-up diode, mounted respectively in TO-220
plastic package and ISOWATT220 fully isolated
package. They are high voltage, high current de-
vices for fast switching applications. In particular
they can be used in horizontal output stages of
110°CRT video displays. The BU8O6/FI are prima-
rily intended for large screen, while the BU807/FI
are for medium and small screens.