Description
M/A-COMs MA4AGFCP910 is an Aluminum Gallium Arsenide Flip-Chip PIN diode. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes exhibit an extremely low RC Product, ( 0.1 ps) and 3nS switching characteristics.
They are fully passivated with silicon nitride and have an additional layer of a polymer for scratch protection. The protective coatings prevent damage to the junction and the anode airbridge during handling.

Features
• Lower Series Resistance, 5.2Ω
• Ultra Low Capacitance, 18 f F
• High Switching Cutoff Frequency, 50 GHz
• 3 Nanosecond Switching Speed
• Driven by Standard TTL
• Silicon Nitride Passivation
• Polyimide Scratch Protection