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MBM29BS32LF18 数据表 (PDF) - SPANSION

MBM29BS32LF18 Datasheet PDF - SPANSION
部件名 MBM29BS32LF18
下载  MBM29BS32LF18 下载

文件大小   314.15 Kbytes
  60 Pages
制造商  SPANSION [SPANSION]
网页  http://www.spansion.com
标志 SPANSION - SPANSION
功能描述 BURST MODE FLASH MEMORY CMOS 32M (2M X 16) BIT

MBM29BS32LF18 Datasheet (PDF)

Go To PDF Page 下载 数据表
MBM29BS32LF18 Datasheet PDF - SPANSION

部件名 MBM29BS32LF18
下载  MBM29BS32LF18 Click to download

文件大小   314.15 Kbytes
  60 Pages
制造商  SPANSION [SPANSION]
网页  http://www.spansion.com
标志 SPANSION - SPANSION
功能描述 BURST MODE FLASH MEMORY CMOS 32M (2M X 16) BIT

MBM29BS32LF18 数据表 (HTML) - SPANSION

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MBM29BS32LF18 产品详情

■ GENERAL DESCRIPTION
The MBM29BS/BT32LF is a 32M bit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 2M words of 16 bits each. The device offered in a 60-ball FBGA package. This device is designed to be programmed in-system with the standard system 1.8V VCC supply.

■ FEATURES
• 0.17 µm process technology
• Single 1.8 volt read, program and erase (1.65 V to 1.95 V)
• Simultaneous Read/Write operation (Dual Bank)
• All Sectors Being Protected Upon Power-up
    The device aims for high-speed read of stored codes, thus to fully prevent it from much anticipated wrong
    operational procedures, programming and erasure, it adopts All-Sectors Lock for ultimate all sector protection
    by default upon power-up.
• FlexBankTM *1
    Bank A: 8M bit (8K words × 4 and 32K words × 15)
    Bank B: 8M bit (32K words × 16)
    Bank C: 8M bit (32K words × 16)
    Bank D: 8M bit (8K words × 4 and 32K words × 15)
• Enhanced I/OTM *2 (VCCQ) Feature
    Input/ Output voltage generated on the device is determined based on the VI/O level
    (MBM29BS32LF: 1.8V VCCQ and MBM29BT32LF: 3.0V VCCQ)
• High Performance Burst frequency reach at 54MHz
    Burst access times of 13.5 ns @ 30 pF at industrial temperature range
    Asynchronous random access times of 70 ns (at 30 pF)
    Synchronous latency of 106 ns with 1.8 V VCCQ, and 106.5 ns with 3.0 V VCCQ (at 30 pF)
• Programmable Burst Read Interface
    Linear Burst: 8, 16, and 32 words with wrap-around
• Compatible with JEDEC-standard commands
    Uses same software commands as E2PROMs
• Minimum 100,000 program/erase cycles
• Sector Erase Architecture
    Eight 8K words, sixty-two 32K words sectors.
    Any combination of sectors can be concurrently erased. Also supports full chip erase.
• Write Protect Pin (WP)
    At VIL, allows protection of “outermost” 2 × 8K words on low end of boot sectors(SA0 and SA1), regardless of
    sector protection/unprotection status
• Accelerate Pin (ACC)
    At VACC, increases program performance.
    At VIL, hardware protect method to lock all sectors.
• Embedded EraseTM *2 Algorithms
    Automatically preprograms and erases the chip or any sector
• Embedded ProgramTM *2 Algorithms
    Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Automatic sleep mode
    When address remain stable, the device automatically switches itself to low power mode
• Erase Suspend/Resume
    Suspends the erase operation to allow a read data and/or program in another sector within the same device
• In accordance with CFI (Common Flash Interface)
• Hardware reset pin (RESET)
    Hardware method to reset the device for reading array data
    To avoid initiation of a write cycle during Vcc power-up/down, Reset must be VIL for defined time.
• Protection
    Software command sector locking
    WP protects the outermost two boot sectors(SA0 and SA1)
    ACC protects all sector at VIL. Should be at VIH for all other conditions.
• CMOS compatible inputs, CMOS compatible outputs




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