General Description
These N-channel enhancement mode power mosfets used
advanced trench technology design, provided excellent Rdson
and low gate charge. Which accords with the RoHS standard.

Features
VDS = 60V,ID =35A
RDS(ON),23 mΩ(Typ) @ VGS =10V
RDS(ON),30 mΩ(Typ) @ VGS =4.5V
Fast Switching
Low ON Resistance(Rdson≤29mΩ)
Low Gate Charge
Low Reverse transfer capacitances
100% Single Pulse avalanche energy Test

Application
Power switch circuit of adaptor and charger;
LED backlight driver;
Synchronousrectification