Description
The AP7N65F/P is silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency.

General Features
VDS = 650V ID =7A
RDS(ON) < 1.2Ω @ VGS=10V Type 1.0Ω

Application
Uninterruptible Power Supply(UPS)
Power Factor Correction (PFC)