Features
• Low Input Capacitance: 2.0pF Typical
• Low Gate Leakage: 0.5pA Typical
• High Breakdown Voltage: -60V Typical
• High Input Impedance
• Small Die: 365um X 365um X 203um
• Bond Pads: 90um X 90um
• Substrate Connected to Gate
• Au Back-Side Finish

Applications
• Small Signal Amplifier
• Ultrahigh Impedance Pre-Amplifier
• Pico-Amp Diodes (PAD)
• High Input Impedance Buffers
• Custom Part Options

Description
The InterFET N0001H Geometry is targeted high
impedance low leakage applications. The low
input capacitance makes it ideal for high
frequency applications.

Standard Parts
• 2N4117/A, 2N4118/A, 2N4119/A
• PAD1, PAD2, PAD5, PAD10
• PAD20, PAD50
• DPAD1, DPAD2, DPAD5, DPAD10
• DPAD20, DPAD50, DPAD100
• IFN421, IFN422, IFN423, IFN424
• IFN425, IFN426, IFN427, IFN428
• VCR7N