DESCRIPTION
Large area diode chip for medium current photovoltaic bypass applications, or for higher current hybrid applications. The device is rated for 1A for applications where the device will be exposed to substantial radiation flux (space). For other applications, it may be operated at higher currents. A version with attached leads is available.

KEY FEATURES
◾ Oxide passivated structure for very low leakage currents
◾ Epitaxial structure minimizes forward voltage drop
◾ Triangular shape to fit in corner near flat of photovoltaic cell
◾ Forward voltage decreases with radiation exposure
◾ Targeted for terrestrial applications with silicon photovoltaic cells
◾ Thin construction for fit with photovoltaic cells

APPLICATIONS/BENEFITS
◾ Increases efficiency of photovoltaic arrays
◾ Protects photovoltaic cells from reverse voltage