FEATURES
Low offset voltage: 60 μV maximum at 25°C (8-lead and 14-lead SOIC)
Low offset voltage drift: 1 μV/°C maximum (8-lead and 14-lead SOIC)
Low input bias current: 1 nA maximum at 25°C
Low voltage noise density: 8 nV/√Hz typical at 1 kHz
Large signal voltage gain (AVO): 100 dB minimum over full supply voltage and operating temperature
Input overvoltage protection to 32 V above and below the supply voltage rail
Integrated EMI filter
70 dB typical rejection at 1000 MHz
90 dB typical rejection at 2400 MHz
Rail-to-rail output swing
Low supply current: 500 μA typical per amplifier
Wide bandwidth
Gain bandwidth product (AV = 100): 3.5 MHz typical
Unity-gain crossover (AV = 1): 3.5 MHz typical
−3 dB bandwidth (AV = 1): 6 MHz typical
Dual-supply operation
Specified at ±5 V to ±15 V, operates over ±2.5 V to ±18 V
Unity-gain stable
No phase reversal
Long-term offset voltage drift (10,000 hours): 2 μV typical
Temperature hysteresis: 2 μV typical
APPLICATIONS
Wireless base station control circuits
Optical network control circuits
Instrumentation
Sensors and controls
Thermocouples, RTDs, strain gages, shunt current measurements