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SCT040H120G3-7 数据表 (PDF) - STMicroelectronics
SCT040H120G3-7 Datasheet PDF - STMicroelectronics
部件名 SCT040H120G3-7
下载  SCT040H120G3-7 下载
文件大小   372.25 Kbytes
页   14 Pages
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics
功能描述 Silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an H²PAK-7 package

SCT040H120G3-7 Datasheet (PDF)

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SCT040H120G3-7 Datasheet PDF - STMicroelectronics

部件名 SCT040H120G3-7
下载  SCT040H120G3-7 Click to download

文件大小   372.25 Kbytes
页   14 Pages
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics
功能描述 Silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an H²PAK-7 package

SCT040H120G3-7 数据表 (HTML) - STMicroelectronics


SCT040H120G3-7 产品详情

Features
• Very fast and robust intrinsic body diode
• Very low RDS(on) over the entire temperature range
• High speed switching performances
• Source sensing pin for increased efficiency

Applications
• Switching mode power supply
• Power supply for renewable energy systems
• DC-DC converters

Description
This silicon carbide Power MOSFET device has been developed using ST’s
advanced and innovative 3rd generation SiC MOSFET technology. The device
features a very low RDS(on) over the entire temperature range combined with low
capacitances and very high switching operations, which improve application
performance in frequency, energy efficiency, system size and weight reduction




类似零件编号 - SCT040H120G3-7

制造商部件名数据表功能描述
logo
STMicroelectronics		 SCT040H120G3AG STMICROELECTRONICS-SCT040H120G3AG Datasheet
386Kb / 14P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an H²PAK-7 package
14-Oct-2022
More results


类似说明 - SCT040H120G3-7

制造商部件名数据表功能描述
logo
STMicroelectronics		 SCTH40N120G2V7AG STMICROELECTRONICS-SCTH40N120G2V7AG Datasheet
606Kb / 14P		 Automotive-grade silicon carbide Power MOSFET, 1200 V, 33 A,75 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package
DS12969 - Rev 1 - April 2019
SCT011H75G3AG STMICROELECTRONICS-SCT011H75G3AG Datasheet
395Kb / 14P		 Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an H²PAK-7 package
08-Mar-2022
SCT012H90G3AG STMICROELECTRONICS-SCT012H90G3AG Datasheet
390Kb / 14P		 Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an H²PAK-7 package
27-Sep-2022
SCT018H65G3AG STMICROELECTRONICS-SCT018H65G3AG Datasheet
390Kb / 14P		 Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an H²PAK-7 package
07-Oct-2022
SCT020H120G3AG STMICROELECTRONICS-SCT020H120G3AG Datasheet
362Kb / 14P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an H²PAK-7 package
27-Sep-2022
SCT025H120G3AG STMICROELECTRONICS-SCT025H120G3AG Datasheet
369Kb / 14P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 55 A in an H²PAK-7 package
28-Nov-2022
SCT040H120G3AG STMICROELECTRONICS-SCT040H120G3AG Datasheet
386Kb / 14P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an H²PAK-7 package
14-Oct-2022
SCT040H65G3AG STMICROELECTRONICS-SCT040H65G3AG Datasheet
389Kb / 14P		 Automotive-grade silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an H²PAK-7 package
21-Jan-2022
SCT070H120G3AG STMICROELECTRONICS-SCT070H120G3AG Datasheet
396Kb / 14P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an H²PAK-7 package
04-Apr-2023
SCTH60N120G2-7AG STMICROELECTRONICS-SCTH60N120G2-7AG Datasheet
356Kb / 14P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 55 A in an H²PAK-7 package
02-Aug-2021
More results




关于 STMicroelectronics

Stmicroelectronics是位于瑞士日内瓦的跨国电子和半导体制造商。

该公司为汽车，工业和消费者市场的各种应用提供了广泛的产品，包括微控制器，传感器，功率放大器和集成电路。

Stmicroelectronics成立于1987年，在1​​00多个国家 /地区开展业务，是世界上最大的半导体公司之一。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。




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