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IRG4PC30FDPBF 数据表 (PDF) - International Rectifier
IRG4PC30FDPBF Datasheet PDF - International Rectifier
部件名 IRG4PC30FDPBF
下载  IRG4PC30FDPBF 下载
文件大小   384.56 Kbytes
页   11 Pages
制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier
功能描述 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack 1GBT

IRG4PC30FDPBF Datasheet (PDF)

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IRG4PC30FDPBF Datasheet PDF - International Rectifier

部件名 IRG4PC30FDPBF
下载  IRG4PC30FDPBF Click to download

文件大小   384.56 Kbytes
页   11 Pages
制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier
功能描述 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack 1GBT

IRG4PC30FDPBF 数据表 (HTML) - International Rectifier


IRG4PC30FDPBF 产品详情

VCES = 600V
VCE(on) typ. = 1.59V
@VGE = 15V, IC = 17A

Features
• Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
• Industry standard TO-247AC package
• Lead-Free

Benefits
• Generation -4 IGBTs offer highest efficiencies available
• IGBTs optimized for specific application conditions
• HEXFRED diodes optimized for performance with IGBTs . Minimized recovery characteristics require less/no snubbing
• Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs




类似零件编号 - IRG4PC30FDPBF

制造商部件名数据表功能描述
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International Rectifier		 IRG4PC30FDPBF IRF-IRG4PC30FDPBF Datasheet
385Kb / 11P		 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PC30FDPBF IRF-IRG4PC30FDPBF_15 Datasheet
385Kb / 11P		 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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类似说明 - IRG4PC30FDPBF

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International Rectifier		 IRG4BC10SDPBF IRF-IRG4BC10SDPBF Datasheet
267Kb / 10P		 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGBC30KD2 IRF-IRGBC30KD2 Datasheet
145Kb / 9P		 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT
IRGB4059DPBF IRF-IRGB4059DPBF Datasheet
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IRGB4064DPBF IRF-IRGB4064DPBF Datasheet
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IRGI4061DPBF IRF-IRGI4061DPBF Datasheet
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IRG4IBC20KDPBF IRF-IRG4IBC20KDPBF Datasheet
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IRG4BC30UDPBF IRF-IRG4BC30UDPBF Datasheet
279Kb / 11P		 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT
IRG4BC30KDPBF IRF-IRG4BC30KDPBF Datasheet
321Kb / 11P		 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast 1GBT
IRG4BC20FD-SPBF IRF-IRG4BC20FD-SPBF Datasheet
298Kb / 12P		 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT
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239Kb / 11P		 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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关于 International Rectifier

国际整流器（IR）是一家美国公司，专门从事电力管理和电力控制半导体的设计和制造。
该公司成立于1947年，总部位于加利福尼亚州的El Segundo。
IR提供了广泛的产品，包括电力管理IC，Power MOSFET，IGBT和其他电力控制产品。
该公司的产品用于各种应用，例如计算，电信和工业自动化。
IR以其电力管理和控制技术方面的专业知识以及向客户提供高质量和可靠产品的能力而闻名。
2014年，IR被Infineon Technologies收购，Infineon Technologies是电力管理和控制产品以及其他半导体解决方案的领先提供商。
国际整流器品牌不再使用，但其技术和产品仍然是Infineon投资组合的一部分。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。




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