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STCV10700BY4 数据表 (PDF) - Innogration Technologies, Inc.

STCV10700BY4 Datasheet PDF - Innogration Technologies, Inc.
部件名 STCV10700BY4
下载  STCV10700BY4 下载
文件大小   1459.12 Kbytes
页   6 Pages
制造商  INNOGRATION [Innogration Technologies, Inc.]
网页  http://www.innogration.net/index.htm
标志 INNOGRATION - Innogration Technologies, Inc.
功能描述 Gallium Nitride 50V, 700W,0.6-1GHz RF Power Transistor

STCV10700BY4 Datasheet (PDF)

Go To PDF Page 下载 数据表
STCV10700BY4 Datasheet PDF - Innogration Technologies, Inc.

部件名 STCV10700BY4
下载  STCV10700BY4 Click to download

文件大小   1459.12 Kbytes
页   6 Pages
制造商  INNOGRATION [Innogration Technologies, Inc.]
网页  http://www.innogration.net/index.htm
标志 INNOGRATION - Innogration Technologies, Inc.
功能描述 Gallium Nitride 50V, 700W,0.6-1GHz RF Power Transistor

STCV10700BY4 数据表 (HTML) - Innogration Technologies, Inc.


STCV10700BY4 产品详情

Description
The STCV10700BY4 is a dual path 700watt capable, GaN HEMT, ideal for applications from 0.6 to 1GHz.
It can support CW, pulse or any modulated signal. It can be configured as push pull or Doherty.
There is no guarantee of performance when this part is used outside of stated frequencies.

Applications
 Asymmetrical Doherty amplifier within 0.6-1GHz
 UHF TV
 P band power amplifier




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