Features
• Single-channel galvanically isolated coreless transformer based gate driver
• Separate outputs, output UVLO referenced to GND2 or adjustable output UVLO options
• For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs
• Up to 6.5 A typical peak output current
• 40 ns propagation delay with 7 ns part-to-part matching (skew)
• 35 V absolute maximum output supply voltage
• Very high (best-in-class) common-mode transient immunity CMTI > 300 kV/μs
• Active shutdown and short circuit clamping
• 150 mil DSO-8 and 300 mil LDSO-8 packages with CTI > 600
• 3.3 V and 5 V input supply voltage
• Suitable for operation at high ambient temperature and in fast switching applications
• UL 1577 certification VISO = 3.0 kV (rms) for 1 min (File E311313) for 1ED314xMU12F
• UL 1577 certification VISO = 5.7 kV (rms) for 1 min (File E311313), and IEC 60747-17 (VIORM = 1767 V)
(planned) for 1ED314xMC12H