| 制造商 | 部件名 | 数据表 | 功能描述 |
 Analog Devices |
ADG901
|
1Mb / 12P |
Wideband, 40 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, SPST Switches
10/04-Data Sheet changed from REV. 0 to REV. A. |
 Toshiba Semiconductor |
TIM1414-7-252
|
255Kb / 4P |
HIGH POWER P1dB=38.0 dBm at 13.75 GHz to 14.5 GHz
|
|
TIM1414-2-252
|
251Kb / 4P |
HIGH POWER P1dB=33.0 dBm at 13.75 GHz to 14.5 GHz
|
|
TIM1414-8-252
|
164Kb / 4P |
HIGH POWER P1dB=39.0 dBm at 13.75 GHz to 14.5 GHz
|
 Analog Devices |
ADG901
|
737Kb / 16P |
Wideband, 40 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, SPST Switches
REV. B |
|
ADG918
|
570Kb / 16P |
Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT
REV. C |
|
ADG904BRUZ
|
517Kb / 17P |
Wideband 2.5 GHz, 37 dB Isolation at 1 GHz, CMOS 1.65V to 2.75V, 4:1 Mux/SP4T
REV. C |
 Pasternack Enterprises,... |
PE15A1028
|
520Kb / 5P |
40 dB Gain, 0.7 dB NF, 12 dBm P1dB, 1.2 GHz
|
|
PE15A1024
|
407Kb / 5P |
1.5 dB NF, 17 dBm P1dB, 1.2 GHz to 1.4 GHz,Low Noise Amplifier, 35 dB Gain, SMA
|
 CRYSTEK CORPORATION |
CBTEE-01-50-6000
|
235Kb / 4P |
High Isolation, 35 dB Typical at 1 GHz
|