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TCR3RM115A 数据表 (PDF) - Toshiba Semiconductor

TCR3RM115A Datasheet PDF - Toshiba Semiconductor
部件名 TCR3RM115A
下载  TCR3RM115A 下载
文件大小   1781.12 Kbytes
  20 Pages
制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor
功能描述 TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic

TCR3RM115A Datasheet (PDF)

Go To PDF Page 下载 数据表
TCR3RM115A Datasheet PDF - Toshiba Semiconductor

部件名 TCR3RM115A
下载  TCR3RM115A Click to download

文件大小   1781.12 Kbytes
  20 Pages
制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor
功能描述 TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic

TCR3RM115A 数据表 (HTML) - Toshiba Semiconductor


TCR3RM115A 产品详情

Features
Ultra small package DFN4C/DFN4F (1.0 mm x 1.0 mm; t 0.38 mm (Typ.)).
High Ripple rejection ratio 100 dB (Typ.) @1 kHz (VOUT = 2.8 V)
High Ripple rejection ratio 93 dB (Typ.) @10 kHz (VOUT = 2.8 V)
High Ripple rejection ratio 68 dB (Typ.) @100 kHz (VOUT = 2.8 V)
High Ripple rejection ratio 68 dB (Typ.) @1 MHz (VOUT = 2.8 V)
Low output noise voltage (VNO = 5 μVrms (Typ.) at 10 Hz ≤ f ≤ 100 kHz)
Low quiescent current (IB = 7 μA (Typ.) at IOUT = 0 mA)
Overcurrent protection
Thermal shutdown
Auto-discharge
Low Dropout voltage
VDO = 130 mV (Typ.), VOUT = 2.8 V, IOUT = 300 mA
Wide range output voltage line up (VOUT = 0.9 to 4.5 V)
Pull down connection between CONTROL and GND
Ceramic capacitors can be used (CIN = 1 μF, COUT =1 μF)




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