Features:
• Flat lensed for wide acceptance angle (OP508F)
• Lensed for high sensitivity (OP509)
• Easily stackable on 0.100” (2.54 mm) hole centers
• Inexpensive plastic package
• Mechanically and spectrally matched to OP168 and OP268 series of infrared emitting diodes
Description:
The OP508FA consists of an NPN silicon phototransistor mounted in a flat, black plastic “end-looking” package. The flat sensing surface allows an acceptance half-angle of 60° when measured from the optical axis to the half power point.
Each device in the OP509 series consists of an NPN silicon phototransistor mounted in a lensed, clear plastic “end-looking” package. The lensing effect of the package allows an acceptance half-angle of 25° when measured from the optical axis to the half power point.
OP508FA and OP509 series devices can be mounted on 0.100” (2.54 mm) hole centers, which makes them an ideal low-cost alternate to hermetic OP600 sensors. OP508FA and OP509 series devices are mechanically and spectrally matched to the OP168F and OP268F series of infrared emitting diodes.
Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data.
For custom versions of the OP508FA and OP509 series devices please contact your OPTEK representative.
Applications:
• Applications requiring a wide acceptance angle
• Applications requiring high sensitivity
• Space-limited applications