Features
■ High BV CEO : 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M)
■ Closely Matched Current Transfer Ratio (CTR) Minimizes Unit-to-Unit Variation
■ Current Transfer Ratio In Select Groups
■ Very Low Coupled Capacitance Along With No Chip-to-Pin 6 Base Connection for Minimum Noise Susceptability (CNY17FXM, MOC8106M)
■ Safety and Regulatory Approvals:
– UL1577, 4,170 VAC RMS for 1 Minute
– DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage

Applications
■ Power Supply Regulators
■ Digital Logic Inputs
■ Microprocessor Inputs
■ Appliance Sensor Systems
■ Industrial Controls

Description
The CNY17XM, CNY17FXM, and MOC8106M devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in-line package.