1 Features
• Undershoot protection for off-isolation on A and B
ports up to −2 V
• Bidirectional data flow, with near-zero propagation
delay
• Low on-state resistance (ron) characteristics (ron =
3 Ω typical)
• Low input output capacitance minimizes loading
and signal distortion (Cio (OFF) = 8 pF typical)
• Data and control inputs provide undershoot clamp
diodes
• Low power consumption (ICC = 3 μA maximum)
• VCC operating range from 4 V to 5.5 V data I/Os
support 0 to 5-V signaling levels (0.8-V, 1.2-V, 1.5-
V, 1.8-V, 2.5-V, 3.3-V, and 5-V)
• Control inputs can be driven by TTL or 5-V/3.3-V
CMOS outputs
• Ioff supports partial-power-down mode operation
• Latch-up performance exceeds 100 mA per JESD
78, Class II
• ESD performance tested per JESD 22− 2000-V
Human-Body Model (A114-B, Class II)− 1000-V
Charged-Device Model (C101)
• Supports both digital and analog applications: PCI
interface, memory interleaving, bus isolation, lowdistortion
signal gating

2 Applications
• Enterprise servers
• Ethernet switches
• Routers
• Servers
• Industrial PCs

3 Description
The SN74CBT3383C is a high-speed TTL-compatible
FET bus-exchange switch with low ON-state
resistance (ron), allowing for minimal propagation
delay. Active Undershoot-Protection Circuitry on the
A and B ports of the SN74CBT3383C provides
protection for undershoot up to −2 V by sensing
an undershoot event and ensuring that the switch
remains in the proper OFF state.
The SN74CBT3383C is organized as a 10-bit bus
switch, or as a 5-bit bus-exchange switch with a
single output-enable (BE) input that provides data
exchanging between four signal ports. The select
(BX) input controls the data path of the bus-exchange
switch. When BE is low, the A port is connected to
the B port, allowing bidirectional data flow between
ports. When BE is high, a high-impedance state exists
between the A and B ports.