1 Features
• Qualified for automotive applications
– AEC-Q100 grade 1: –40 to 125°C TA
• Low EMI:
– Meets CISPR25 class 5 performance with no
additional components
• Integrated avalanche rated MOSFETs
– Designed and qualified for reliability for
dielectric withstand testing (Hi-Pot)
• TPSI2240-Q1 IAVA = 1mA for 60s pulses
• TPSI2240T-Q1 IAVA = 3mA for 60s pulses
– 1200V standoff voltage
– RON = 130Ω (TJ = 25°C)
– TON, TOFF < 700μs
– IOFF = 1.22μA at 1000V (TJ = 105°C)
• Low primary side supply current
– 5mA ON state current
– 3.5μA OFF state current (TJ = 25°C)
• Functional Safety Capable
– Documentation available to aid in ISO 26262
and IEC 61508 system design
• Robust isolation barrier:
– > 30 year projected lifetime at 1000VRMS /
1500VDC working voltage
– Reinforced Isolation rating, VISO, up to
3750VRMS
• SOIC 11-pin (DWQ) package with wide pins for
improved thermal performance
– Creepage and clearance ≥ 8mm (primarysecondary)
– Creepage and clearance ≥ 6mm (across switch
terminals)
• Safety-related certifications
– (Planned) DIN EN IEC 60747-17 (VDE
0884-17)
– (Planned) UL 1577 component recognition
program

2 Applications
• Solid state relay
• Hybrid, electric, and power train systems
• Battery Management Systems (BMS)
• Energy Storage Systems (ESS)
• Solar energy
• Onboard charger
• EV charging infrastructure
• See also the TI Reference Designs related to
these applications.

3 Description
The TPSI2240-Q1 is an isolated solid state relay
designed for high voltage automotive and industrial
applications. The TPSI2240-Q1 uses TI's high
reliability capacitive reinforced isolation technology in
combination with internal back-to-back MOSFETs to
form an integrated solution requiring no secondary
side power supply.
The primary side of the device is powered by only
5mA of input current and incorporates a fail-safe EN
pin preventing any possibility of back powering the
VDD supply. In most applications, the VDD pin of
the device should be connected to a system supply
between 5V – 20V and the EN pin of the device
should be driven by a GPIO output with logic HI
between 2.1V – 20V. In other applications, The VDD
and EN pins could be driven together directly from
the system supply or from a GPIO output. All control
configurations of the TPSI2240-Q1 do not require
additional external components such as a resistor
and/or low side switch that are typically required in
photo relay solutions.
The secondary side consists of back-to-back
MOSFETs with a standoff voltage of ±1.2kV from
S1 to S2. The TPSI2240-Q1 MOSFET's avalanche
robustness and thermally conscious package design,
allow it to robustly support system level dielectric
withstand testing (HiPot) and DC fast charger surge
currents of up to 1mA without requiring any external
components.