1 Features
• Drives two N-channel MOSFETs in high-side and
low-side configuration
• Negative voltage handling on HS (–18V)
• Maximum boot voltage 120V
• Maximum VDD voltage 20V
• On-chip 0.65V VF, 0.65Ω RD bootstrap diode
• 22ns propagation delay times
• 3A sink, 3A source output currents
• 8ns rise/7ns fall time with 1000pF load
• 1ns delay matching
• Undervoltage lockout for high-side and low-side
driver
• Specified from –40°C to 150°C

2 Applications
• Solar power optimizers and micro inverters
• Telecom and merchant power supplies
• Online and offline UPS
• Energy storage systems
• Battery test equipment

3 Description
The UCC2720xA family of high-frequency N-channel
MOSFET drivers include a 120V bootstrap diode and
high-side/low-side driver with independent inputs for
maximum control flexibility. This allows for N-channel
MOSFET control in half-bridge, full-bridge, twoswitch
forward and active clamp forward converters.
The low-side and the high-side gate drivers are
independently controlled and matched to 1ns between
the turn-on and turn-off of each other. In order
to improve performance in noisy power supply
environments the UCC2720xA has an enhanced ESD
input structure and also has the ability to withstand a
maximum of –18V on its HS pin.
An on-chip bootstrap diode eliminates the external
discrete diodes. Under-voltage lockout is provided for
both the high-side and the low-side drivers forcing the
outputs low if the drive voltage is below the specified
threshold.
Two versions of the UCC2720xA are offered. The
UCC27200A has high-noise immune CMOS input
thresholds while the UCC27201A has TTL-compatible
thresholds.