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IS46TR16256B-125KBLA1 数据表 (PDF) - Integrated Silicon Solution, Inc

IS46TR16256B-125KBLA1 Datasheet PDF - Integrated Silicon Solution, Inc
部件名 IS46TR16256B-125KBLA1
下载  IS46TR16256B-125KBLA1 下载
文件大小   4198.07 Kbytes
  87 Pages
制造商  ISSI [Integrated Silicon Solution, Inc]
网页  http://www.issi.com
标志 ISSI - Integrated Silicon Solution, Inc
功能描述 512Mx8, 256Mx16 4Gb DDR3 SDRAM

IS46TR16256B-125KBLA1 Datasheet (PDF)

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IS46TR16256B-125KBLA1 Datasheet PDF - Integrated Silicon Solution, Inc

部件名 IS46TR16256B-125KBLA1
下载  IS46TR16256B-125KBLA1 Click to download

文件大小   4198.07 Kbytes
  87 Pages
制造商  ISSI [Integrated Silicon Solution, Inc]
网页  http://www.issi.com
标志 ISSI - Integrated Silicon Solution, Inc
功能描述 512Mx8, 256Mx16 4Gb DDR3 SDRAM

IS46TR16256B-125KBLA1 数据表 (HTML) - Integrated Silicon Solution, Inc


IS46TR16256B-125KBLA1 产品详情

FEATURES
• Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
• Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V
- Backward compatible to 1.5V
• High speed data transfer rates with system frequency up
to 1066 MHz
• 8 internal banks for concurrent operation
• 8n-Bit pre-fetch architecture
• Programmable CAS Latency
• Programmable Additive Latency: 0, CL-1,CL-2
• Programmable CAS WRITE latency (CWL) based on tCK
• Programmable Burst Length: 4 and 8
• Programmable Burst Sequence: Sequential or Interleave
• BL switch on the fly
• Auto Self Refresh(ASR)
• Self Refresh Temperature(SRT)
• Refresh Interval:
7.8 μs (8192 cycles/64 ms) Tc= -40°C to 85°C
3.9 μs (8192 cycles/32 ms) Tc= 85°C to 105°C
1.95 μs (8192 cycles/16 ms) Tc= 105°C to 115°C
0.97 μs (8192 cycles/8 ms) Tc= 115°C to 125°C
• Partial Array Self Refresh
• Asynchronous RESET pin
• TDQS (Termination Data Strobe) supported (x8 only)
• OCD (Off-Chip Driver Impedance Adjustment)
• Dynamic ODT (On-Die Termination)
• Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
• Write Leveling
• Up to 200MHz in DLL off mode
• Operating temperature:
Commercial (TC = 0°C to +95°C)
Industrial (TC = -40°C to +95°C)
Automotive, A1 (TC = -40°C to +95°C)
Automotive, A2 (TC = -40°C to +105°C)
Automotive, A25 (TC = -40°C to +115°C)
Automotive, A3 (TC = -40°C to +125°C)




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关于 Integrated Silicon Solution, Inc


Integrated Silicon Solution, Inc. (ISSI) is a fabless semiconductor company that designs and markets high-performance integrated circuits (ICs) for the automotive, industrial, medical, and communications markets. The company was founded in 1988 and is headquartered in Milpitas, California, USA.

ISSI's product portfolio includes static random access memory (SRAM), dynamic random access memory (DRAM), and analog and mixed-signal ICs. The company specializes in low-power, high-speed SRAMs, and is a leading supplier of DRAMs to the automotive market.

In 2015, ISSI was acquired by China's Uphill Investment Co., Ltd. and became a wholly-owned subsidiary of Uphill Investment.

*此信息仅供一般参考,对于因上述信息造成的任何损失或损害,我们概不负责。




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