DESCRIPTION
MB85RS256A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768
words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
nonvolatile memory cells.
MB85RS256A adopts the Serial Peripheral Interface (SPI).
The MB85RS256A is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85RS256A can be used for 1010 read/write operations, which is a significant
improvement over the number of read and write operations supported by Flash memory and E2PROM.
MB85RS256A does not take long time to write data unlike Flash memories nor E2PROM, and MB85RS256A
takes no wait time.

FEATURES
Bit configuration : 32,768 words × 8 bits
Serial Peripheral Interface : SPI (Serial Peripheral Interface)
Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)
Operating frequency : 25 MHz (Max)
High endurance : 10 Billion Read/Writes
Data retention : 10 years (+55 °C)
Operating power supply voltage : 3.0 V to 3.6 V
Low power operation : Operating power supply current 5 mA (Typ@25 MHz)
Standby current 9 μA (Typ)
Operating temperature range : -40 °C to +85 °C
Package : 8-pin plastic SOP (FPT-8P-M02)
RoHS compliant